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Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate
Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate
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机译:在同一衬底上形成拉伸应变的SiGe鳍片和压缩应变的SiGe鳍片的方法和结构
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摘要
A method of forming a semiconductor structure that includes compressive strained silicon germanium alloy fins having a first germanium content and tensile strained silicon germanium alloy fins having a second germanium content that is less than the first germanium content is provided. The different strained and germanium content silicon germanium alloy fins are located on a same substrate. The method includes forming a cladding layer of silicon around a set of the silicon germanium alloy fins, and forming a cladding layer of a germanium containing material around another set of the silicon germanium alloy fins. Thermal mixing is then employed to form the different strained and germanium content silicon germanium alloy fins.
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