首页> 外国专利> METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS

METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS

机译:用于制造具有局部受控区域的薄半导体晶圆的方法和装置,该局部受控区域相对于其他区域和此类晶圆要厚

摘要

Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180 - 250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6 x 1017 atoms/cc, preferably less than 2 x 1017, total oxygen less than 8. 75 x 1017 atoms/cc, preferably less than 5. 25 x 1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.
机译:在受控位置处具有较薄和较厚区域的半导体晶圆可用于光伏。内部可以小于180微米或更薄,至50微米,并且在180-250微米处具有较厚的部分。薄晶圆效率更高。较厚的周边可提高处理强度。较厚的条纹,平台和岛用于金属耦合。晶片可以直接由模板上的熔体制成,具有不同吸热倾向的区域布置成对应于相对厚度的位置。间隙氧小于6 x 1017原子/ cc,优选小于2 x 1017,总氧小于8。75 x 1017原子/ cc,优选小于5。25 x1017。较厚的区域形成相邻模板区域,相对较高吸热倾向较薄的区域,相邻区域的提取倾向较小。较厚的模板区域具有较高的提取倾向。模板上的功能材料也具有不同的提取倾向。

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