首页> 外国专利> BLACK PHOSPHORUS CRYSTAL WITH HIGH PHOTOELECTRIC RESPONSE RATE, TWO-DIMENSIONAL BLACK PHOSPHORUS PN JUNCTION, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF

BLACK PHOSPHORUS CRYSTAL WITH HIGH PHOTOELECTRIC RESPONSE RATE, TWO-DIMENSIONAL BLACK PHOSPHORUS PN JUNCTION, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF

机译:高光电响应率,二维黑磷PN结的黑磷晶体及其制备方法和应用

摘要

A black phosphorus crystal with a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and a preparation method therefor and the application thereof. The black phosphorus crystal with a high photoelectric response rate is a single crystal with a space point group being Cmca(no.64), cell parameters being α = 3.2 Å-3.4 Å,b = 10.4 Å-10.6 Å and c = 4.3 Å-4.5 Å, and an interlayer spacing being 4 Å-6 Å, and has the advantages of high photoelectric response rate, adjustable semiconductor type, etc.; and the preparation method therefor is simple, requires mild conditions, and has the advantages of high yield, low cost and low pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus thin film, n-type doping is performed on a first region of the thin film so as to form an n-type semiconductor, a second region is kept as a p-type semiconductor, and the first region is adjacent to the second region, so that a joining face of the n-type semiconductor and the p-type semiconductor forms a PN junction. The two-dimensional black phosphorus PN junction has the properties of unidirectional conductivity, special photovoltaic effect, etc., and the preparation method therefor is simple and efficient, has good repeatability, and is compatible with a conventional semiconductor process. The black phosphorus crystal and the two-dimensional black phosphorus PN junction have a wide application prospect in the field of photoelectricity and electronics.
机译:具有高光电响应率的黑磷晶体,二维黑磷PN结及其制备方法和应用。具有高光电响应率的黑磷晶体是单晶,其空间点群为Cmca(64),晶胞参数为α= 3.2Å-3.4Å,b = 10.4Å-10.6Å,c = 4.3Å -4.5Å,层间间距为4Å-6Å,具有光电响应率高,半导体类型可调等优点;本发明制备方法简单,条件温和,收率高,成本低,污染小。二维黑磷PN结包括二维黑磷薄膜,对薄膜的第一区域进行n型掺杂以形成n型半导体,第二区域保持为p半导体,并且第一区域与第二区域相邻,使得n型半导体和p型半导体的接合面形成PN结。二维黑磷PN结具有单向导电性,特殊的光电效应等特性,其制备方法简单有效,重复性好,与常规半导体工艺兼容。黑磷晶体和二维黑磷PN结在光电和电子领域具有广阔的应用前景。

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