SiO2 SiO2 METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES

摘要

A void-free SiO ₂ filling of fine recessed features and a selective SiO ₂ deposition method on the catalyst surface are disclosed. According to one embodiment, the method comprises the steps of providing a substrate comprising recessed features, coating a surface of the recessed features with a metal containing catalyst layer, depositing conformal SiO ₂ films in the recessed features that in any of the oxidation and phase, and smooth re-SiO ₂ material of the features are imperforate polar process to the absence of a hydrolysis agent, exposing the substrate to a process gas containing a silanol gas at a substrate temperature below about 150˚C And repeating the coating and exposure at least once to increase the thickness of the conformal SiO ₂ film until it is filled. In one embodiment, the features, the filled recess to SiO ₂ material forms an STI (shallow trench isolation) structures in a semiconductor device.