METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

It is an object to provide a method suitable for the regeneration of a semiconductor substrate having a good flatness and to manufacture a regenerated semiconductor substrate by using a method suitable for regeneration of a semiconductor substrate having a good flatness, To manufacture an SOI substrate.When the convex portion of the semiconductor substrate is removed using a method capable of selectively removing a damaged semiconductor region by irradiation of ions or the like and the semiconductor substrate is planarized by a polishing process including a CMP method, So that the polishing rate of the semiconductor substrate is made uniform and a uniform polishing process is performed. Alternatively, a regenerated semiconductor substrate is manufactured using the above method, and an SOI substrate is manufactured using the regenerated semiconductor substrate.;