首页> 外国专利> Semiconductor memory device method for repairing bad column and setting method for setting redundant information thereof

Semiconductor memory device method for repairing bad column and setting method for setting redundant information thereof

机译:修复坏列的半导体存储器件方法及其设置冗余信息的设置方法

摘要

The repair method of the present invention is a repair method that includes an address of a bad column, identification information for identifying a bad in either an even column or an odd column of a bad column, and an address of a redundant column of a redundant memory region for repairing a bad column Determining whether or not the column address of the selected column matches the address of the bad column based on the redundant information, and if it is determined that one of the bad columns in the bad column is a redundant column based on the identification information, Into one column of the redundant column, and not converting the other column having no defects in the bad column to another column of the redundant column.
机译:本发明的修复方法是包括坏列的地址,用于识别坏列的偶数列或奇数列中的坏的识别信息,以及冗余的冗余列的地址的修复方法。用于修复坏列的内存区域基于冗余信息确定所选列的列地址是否与坏列的地址匹配,以及确定坏列中的坏列之一是冗余列基于标识信息,将其转换为冗余列的一列,并且不将不良列中没有缺陷的另一列转换为冗余列的另一列。

著录项

  • 公开/公告号KR101771635B1

    专利类型

  • 公开/公告日2017-08-25

    原文格式PDF

  • 申请/专利权人 윈본드 일렉트로닉스 코포레이션;

    申请/专利号KR20160085769

  • 发明设计人 야노 마사루;

    申请日2016-07-06

  • 分类号G11C29;G11C16/10;G11C29/44;

  • 国家 KR

  • 入库时间 2022-08-21 13:24:59

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