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ELECTRODE CONFIGURATIONS TO INCREASE ELECTRO-THERMAL ISOLATION OF PHASE-CHANGE MEMORY ELEMENTS AND ASSOCIATED TECHNIQUES
ELECTRODE CONFIGURATIONS TO INCREASE ELECTRO-THERMAL ISOLATION OF PHASE-CHANGE MEMORY ELEMENTS AND ASSOCIATED TECHNIQUES
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机译:电极配置,可增加相变存储元件的电热隔离和相关技术
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摘要
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.
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