首页> 外国专利> ACTIVATION CHAMBER AND KIT USED IN TREATMENT DEVICE FOR LOWERING ELECTRON AFFINITY, TREATMENT DEVICE THAT CONTAINS SAID KIT AND IS USED TO LOWER ELECTRONIC AFFINITY, PHOTOCATHODE ELECTRON-BEAM SOURCE, ELECTRON GUN CONTAINING PHOTOCATHODE ELECTRON-BEAM SOURCE, FREE-ELECTRON LASER ACCELERATOR, TRANSMISSION ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE, ELECTRON-BEAM HOLOGRAPHY MICROSCOPE, ELECTRON-BEAM LITHOGRAPHY DEVICE, ELECTRON-BEAM DIFFRACTION DEVICE, AND ELECTRON-BEAM SCANNING DEVICE

ACTIVATION CHAMBER AND KIT USED IN TREATMENT DEVICE FOR LOWERING ELECTRON AFFINITY, TREATMENT DEVICE THAT CONTAINS SAID KIT AND IS USED TO LOWER ELECTRONIC AFFINITY, PHOTOCATHODE ELECTRON-BEAM SOURCE, ELECTRON GUN CONTAINING PHOTOCATHODE ELECTRON-BEAM SOURCE, FREE-ELECTRON LASER ACCELERATOR, TRANSMISSION ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE, ELECTRON-BEAM HOLOGRAPHY MICROSCOPE, ELECTRON-BEAM LITHOGRAPHY DEVICE, ELECTRON-BEAM DIFFRACTION DEVICE, AND ELECTRON-BEAM SCANNING DEVICE

机译:活化室和套件,用于处理设备中以降低电子亲和力,包含所述成套工具并用于降低电子亲和力的处理设备,光电阴极电子束源,含电子枪的电子枪,含电子阴极的电子电极显微镜,扫描电子显微镜,电子束全息照相术,电子束光刻设备,电子束衍射设备和电子束扫描设备

摘要

This invention provides a treatment device for lowering electron affinity, said treatment device being capable of performing an EA surface treatment on a photocathode material or an EA surface retreatment on a photocathode, and an electron-beam device provided with said treatment device. An activation chamber (20) used in a treatment device for lowering electron affinity by vaporizing a surface-treatment material (30) and using the vaporized surface-treatment material (30) to perform an electron-affinity lowering treatment on a photocathode material (52) or an electron-affinity lowering retreatment on a photocathode (52), said activation chamber (20) being characterized by containing holes through which electrons can pass.
机译:本发明提供了一种用于降低电子亲和力的处理设备,所述处理设备能够在光电阴极材料上进行EA表面处理或在光电阴极上进行EA表面再处理,并且提供了一种具有所述处理设备的电子束设备。在处理装置中使用的活化室(20),其用于通过蒸发表面处理材料(30)来降低电子亲和力,并使用汽化的表面处理材料(30)对光电阴极材料(52)进行电子亲和力降低处理。 )或在光电阴极(52)上的降低电子亲和力的后处理,所述激活室(20)的特征在于包含电子可以穿过的孔。

著录项

  • 公开/公告号EP3024012B1

    专利类型

  • 公开/公告日2018-02-14

    原文格式PDF

  • 申请/专利权人 UNIV NAGOYA NAT UNIV CORP;

    申请/专利号EP20140826750

  • 发明设计人 NISHITANI TOMOHIRO;

    申请日2014-06-12

  • 分类号H01J37/073;H01J1/34;H01J9/12;H01J37/06;

  • 国家 EP

  • 入库时间 2022-08-21 13:17:39

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