MONITORING OF THE PROGRESS OF MELTING BY LIBS TECHNIQUE IN THE PREPARATION OF AN INGOT BY DIRECTIONAL SOLIDIFICATION BY SEED RECOVERY

摘要

The invention relates to a method useful for monitoring the progress of the melting during the production of a silicon ingot by germ-directed solidification, comprising at least the steps of:(i) disposing, in a crucible, a silicon charge positioned on the surface of one or more silicon seeds;said one or more seeds, and / or said silicon charge in one or more given position (s), comprising one or more tracer agents chosen from n-type or p-type doping agents having a partition coefficient in the silicon less than or equal to 10 -1; metal elements having a partition coefficient in silicon less than or equal to 10 -4; and the iso-electronic elements of silicon germanium and tin;(ii) evaluating, during the melting of the silicon charge, the presence and / or amount of tracer agent (s) by a chemical measurement technique of the LIBS type on the surface of the molten silicon bath; and(iii) determine, based on the LIBS measure (s), the progress of the merger.