GAS DOPING SYSTEM FOR CONTROLLED DOPING OF MELT OF SEMICONDUCTOR GRADE MATERIAL OR SOLAR GRADE MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a crystal lifting device for manufacturing an ingot.SOLUTION: The present invention includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a supply pipe, an evaporation container, and a flow rate limiting device. The supply pipe is located in the furnace, and includes at least one supply pipe side wall, a first end part through which a solid dopant introduced into the supply pipe passes, and an opening part on the opposite side from the first end part through which a gas dopant introduced in the furnace passes. The evaporation container is configured to evaporate a dopant inside, and arranged nearby the opening of the supply pipe. The flow rate limiting device enables a solid dopant to move passing through the flow rate limiting device, and is configured to limit a flow of the gas dopant passing through the flow rate limiting device and also arranged in the supply between the first end and evaporation container.SELECTED DRAWING: Figure 1