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VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices
VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices
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机译:VDMOS晶体管,包括VDMOS晶体管的BCD器件以及用这种器件制造集成电路的方法
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摘要
VDMOS transistors, Bipolar-CMOS-DMOS (BCD) devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices are provided. In an example, a BCD device having a VDMOS transistor includes a buried layer over a substrate and an epitaxial layer over the buried layer and having an upper surface. Deep trench isolation regions extend from the upper surface of the epitaxial layer, into the substrate, and isolate a VDMOS region from a device region. In the VDMOS region, a source region is adjacent the upper surface, a vertical gate structure extends into the epitaxial layer, a body region is located adjacent the vertical gate structure and forms a channel, and a VDMOS conductive structure extends through the epitaxial layer and into the buried layer, which is a drain for the VDMOS transistor. The VDMOS conductive structure is a drain contact to the buried layer.
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