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Nanometer standard prototype and method for manufacturing nanometer standard prototype

机译:纳米标准原型和制造纳米标准原型的方法

摘要

A standard sample (72) that is a nanometer standard prototype, having a standard length that serves as a length reference, includes a SiC layer in which a step-terrace structure is formed. The height of a step, used as the standard length, is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. In a microscope such as an STM to be measured in a high-temperature vacuum environment, heating in a vacuum furnace enables surface reconstruction with ordered atomic arrangement, while removing a natural oxide film from the surface, so that accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.
机译:具有作为长度参考的标准长度的纳米标准原型的标准样品( 72 )包括其中形成有阶梯状阶梯结构的SiC层。用作标准长度的台阶高度等于在堆叠方向上对应于一个SiC分子堆叠的一个周期的完整单元的高度,或者等于对应于一个单位的半个单元的高度, SiC分子堆叠在堆叠方向上的半周期。在要在高温真空环境中测量的诸如STM的显微镜中,在真空炉中加热能够以有序的原子排列进行表面重建,同时从表面去除天然氧化膜,从而使台阶的高度准确不降级。因此,获得了可在高温真空下使用的标准样品。

著录项

  • 公开/公告号US10012675B2

    专利类型

  • 公开/公告日2018-07-03

    原文格式PDF

  • 申请/专利权人 TADAAKI KANEKO;SHOJI USHIO;

    申请/专利号US201114357379

  • 发明设计人 SHOJI USHIO;TADAAKI KANEKO;

    申请日2011-11-11

  • 分类号C30B29/36;G01Q40/02;C30B23/02;C30B25/02;H01L29/16;C30B33/12;H01L21/02;

  • 国家 US

  • 入库时间 2022-08-21 13:04:50

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