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Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device

机译:用于形成栅极绝缘膜的组合物,有机薄膜晶体管,电子纸和显示装置

摘要

The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
机译:本发明提供用于形成栅极绝缘膜的组合物,其在不大大降低有机薄膜晶体管,有机薄膜晶体管,电子纸和显示装置的迁移率的情况下提高了有机薄膜晶体管的绝缘可靠性。本发明的用于形成栅极绝缘膜的组合物包含绝缘材料和选自由式(1)至(8)中的任一个表示的化合物,含有重复的高分子化合物(X)的迁移抑制剂。由式(A)表示的单元和由式(B)表示的重复单元和由式(C)表示的重复单元的高分子化合物(Y)。

著录项

  • 公开/公告号US10014474B2

    专利类型

  • 公开/公告日2018-07-03

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORPORATION;

    申请/专利号US201514955698

  • 发明设计人 YASUAKI MATSUSHITA;TOKIHIKO MATSUMURA;

    申请日2015-12-01

  • 分类号H01L51/00;C07F9/145;C08L33/14;H01L51/05;

  • 国家 US

  • 入库时间 2022-08-21 13:04:32

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