首页> 外国专利> POSITIVE STRIKE SCR, NEGATIVE STRIKE SCR, AND A BIDIRECTIONAL ESD STRUCTURE THAT UTILIZES THE POSITIVE STRIKE SCR AND THE NEGATIVE STRIKE SCR

POSITIVE STRIKE SCR, NEGATIVE STRIKE SCR, AND A BIDIRECTIONAL ESD STRUCTURE THAT UTILIZES THE POSITIVE STRIKE SCR AND THE NEGATIVE STRIKE SCR

机译:正向可控硅,负向可控硅,以及利用正向可控硅和负向可控硅的双向ESD结构

摘要

A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.
机译:第一可控硅整流器具有在第一方向上的击穿电压和在第二方向上的击穿电压。第二可控硅整流器在第一方向上具有比第一可控硅整流器高的击穿电压,在第二方向上具有比第一可控硅整流器更低的击穿电压。双向静电放电(ESD)结构同时利用第一可控硅整流器和第二可控硅整流器来提供双向保护。

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