Method for Forming Semiconductor Device Structure with Fine Line Pitch and Fine End-To-End Space

摘要

A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H₂). The method further includes controlling a flow rate of the hydrogen gas (H₂) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.