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Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films
Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films
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机译:沉积保形金属或准金属氮化硅膜的方法及所得膜
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摘要
Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
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机译:本文描述了保形膜和用于形成保形的第4、5、6、13族金属或准金属掺杂的氮化硅介电膜的方法。一方面,提供了一种形成氮化铝硅膜的方法,包括以下步骤:在反应器中提供衬底;将至少一种金属前体引入反应器中,该金属前体在基材的至少一部分表面上反应以提供化学吸附层;用吹扫气体吹扫反应器;将有机氨基硅烷前体引入反应器中,以在基材的至少一部分表面上反应以提供化学吸附层;将包含氮气和惰性气体的等离子体引入反应器中,以与化学吸附层的至少一部分反应并提供至少一个反应位点,其中等离子体以约0.01至约1.5W / cm 2的功率密度产生;以及任选地用惰性气体吹扫反应器;其中重复步骤直到获得所需厚度的氮化铝膜。
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