MEMS STRUCTURE, ELECTROSTATIC CAPACITANCE TYPE SENSOR HAVING MEMS STRUCTURE, PIEZOELECTRIC SENSOR, AND ACOUSTIC SENSOR

摘要

The present invention relates to an electrostatic capacitance type sensor manufactured using MEMS technology, and provides a technique which enables a high SN ratio to be obtained, and which enables an increase in resistance to input pressure. An electrostatic capacitance type sensor which converts a displacement of a diaphragm into a change in an electrostatic capacitance between the diaphragm and a back plate is configured in such a way that part of the external shape of the diaphragm is disposed inward of an opening in a base plate, when seen in a normal line direction, and another part of the external shape of the diaphragm is disposed outward of the opening in the base plate, when seen in the normal line direction.