TESTING METHOD FOR RESISTANCE OF CRYSTALLINE SILICON SOLAR CELL TO LIGHT-INDUCED DEGRADATION

摘要

Disclosed in the present invention is a testing method for resistance of a crystalline silicon solar cell to light-induced degradation. The method comprises the following steps: 1) conducting a first conversion efficiency measurement on a crystalline silicon solar cell; 2) injecting, in a specific temperature condition and by means of electric injection, an electric current into the crystalline silicon solar cell; 3) conducting a second conversion efficiency measurement on the crystalline silicon solar cell after the electric injection; 4) calculating an actual light-induced degradation rate of the crystalline silicon solar cell; and 5) comparing the actual light-induced degradation rate against a predetermined acceptable light-induced degradation rate, and if the actual light-induced degradation rate is not greater than the acceptable light-induced degradation rate, then determining that the crystalline silicon solar cell is an acceptable product having acceptable resistance to light-induced degradation, or else determining that the crystalline silicon solar cell is an unacceptable product not having acceptable resistance to light-induced degradation. The present invention enables quick testing of light-induced degradation with low power consumption, thus providing real-time monitoring on a manufacturing process.