LOW-POWER SUPER JUNCTION POWER MOSFET

摘要

A power MOSFET with a lateral channel structure is disclosed. The power MOSFET includes a P-type substrate; a drain inserted into the substrate; a source inserted into the substrate; an N-type channel formed on the drain and the source; and a gate formed on the N-type channel. The electrical property of the power MOSFET can be improved.;COPYRIGHT KIPO 2018