CMOS An Image Sensor of Improving Quantum Efficiency for Infrared Region with High Absorption of the Rays of the Sun for Acquisition of High Quality Iris image in Outdoors and/or Indoors

摘要

The present invention relates to an image sensor in which a high quality iris image can be obtained both indoors and outdoors and in which the absorption efficiency of sunlight in an infrared band is higher than that of an adjacent wavelength band. The CMOS image sensor is configured to acquire an iris image in indoor or outdoor for this purpose. In the CMOS image sensor, the absorption band of sunlight in the infrared band is higher than the adjacent wavelength band in the first band having a wavelength of 920 nm to 960 nm, A quantum efficiency for a specific wavelength is higher than that of a conventional CMOS image sensor in at least a part of at least one of a first band of 1,160 nm and a third band of 1,300 nm to 1,500 nm, Wherein the absorption rate of sunlight in the infrared band is higher than that of the adjacent wavelength band and the quantum efficiency is improved in the wavelength band including the wavelength band, A CMOS image sensor capable of acquiring a high-quality iris image can be provided. According to this, noise caused by sunlight is reduced during iris photography in the outdoors, and an effect of acquiring a high-quality iris image can be obtained.