首页> 外国专利> ORGANIC DEVELOPMENT PROCESSING APPARATUS AND ORGANIC DEVELOPMENT PROCESSING METHOD

ORGANIC DEVELOPMENT PROCESSING APPARATUS AND ORGANIC DEVELOPMENT PROCESSING METHOD

机译:有机发展处理装置和有机发展处理方法

摘要

The present invention provides an organic development processing method and an organic development processing apparatus capable of stabilizing a fine line width of a circuit pattern and improving a throughput without being influenced by a time difference of an organic development process without using a rinsing liquid . A development nozzle 30 for discharging a developer containing an organic solvent all over the surface of the wafer W in a developing process in which a resist is applied to the surface of the wafer W and a developing solution is supplied to the surface of the wafer W after exposure, And a gas nozzle 40 for discharging the N 2 gas for stopping and drying the development over the entire surface of the wafer W. The developer is discharged from the developing nozzle 30 over the entire surface of the wafer W to simultaneously form a liquid film of the developer containing the organic solvent over the entire surface of the wafer W. Then, The N 2 gas is discharged to the entire surface of the wafer W, the development is stopped, the developer is removed, and the wafer W is dried.
机译:本发明提供了一种有机显影处理方法和有机显影处理设备,其能够在不使用冲洗液的情况下稳定电路图案的细线宽度并提高产量而不受有机显影处理的时间差的影响。显影喷嘴30,用于在显影处理中向基板W的整个表面上排出包含有机溶剂的显影剂,在该显影处理中,将抗蚀剂施加至晶片W的表面,并且将显影液供给至晶片W的表面。曝光后,用于排出N 2 气体的气体喷嘴40,以停止并干燥晶片W的整个表面上的显影剂。显影剂从显影喷嘴30的整个表面上排出。然后,在晶片W的整个表面上同时形成包含有机溶剂的显影剂的液膜。然后,将N 2 气体排放到晶片W的整个表面上,停止显影,除去显影剂,并干燥晶片W。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号