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COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS
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机译:具有空隙空隙的成束纳米结构
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摘要
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
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