III-V compound semiconductor substrate and III-V compound semiconductor substrate with epitaxial layer

摘要

The InP substrate, which is a III-V compound semiconductor substrate, has 0.29 particles / cm 2 or less in particle diameter or 20 particles / cm 2 or less in particle diameter of 0.079 μm or less on the main surface. Include. The epilayer-attached InP substrate, which is an epilayer-attached III-V compound semiconductor substrate, includes the above-described InP substrate and an epitaxial layer disposed on the main surface of the InP substrate, and the thickness of the epitaxial layer is 0.3 μm. When the main surface of this case contains 10 LPDs with an equal area circle diameter of 0.24 μm or more at 10 pieces / cm 2 or less or 30 LPDs with an equal area circle diameter of 0.136 μm or more at 30 pieces / cm 2 or less. Thus, a III-V compound semiconductor substrate and an epilayer-attached III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown on the main surface are provided.