Rprivate use character ParenopenstX)m1  (1A)wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2≤m1≤10,; embedded image wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2,; embedded image wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties."/> Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process
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Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

机译:用于形成有机膜的化合物,用于形成有机膜的组合物,用于形成有机膜的方法以及构图工艺

摘要

A compound for forming an organic film shown by the formula (1A),Rprivate use character ParenopenstX)m1  (1A)wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2≤m1≤10,; embedded image wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2,; embedded image wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.
机译:用于形成式(1A)所示的有机膜的化合物,<?in-line-formulae description =“ In-line Formulae” end =“ lead”?> R “私人使用字符Parenopenst” X) m1 (1A)<?in-line-formulae description =“ In-line Formulae” end =“ tail “?>其中R代表单键或具有1至50个碳原子的有机基团; X表示式(1B)所示的基团。 m1表示满足2≤m1≤10的整数,; “嵌入式图像” 其中X 2 表示具有1至10个碳原子的二价有机基团; n1代表0或1; n2代表1或2; X 3 表示式(1C)所示的基团。 n5代表0、1或2; “嵌入式图像” 其中R 10 表示氢原子或具有1至10个碳原子的饱和或不饱和烃基,其中式(1C)中苯环的氢原子可被甲基或甲氧基取代组。该用于形成有机膜的化合物可以提供具有良好的耐干蚀刻性,至400℃以上的耐热性,高填充性和平坦化性的有机膜组合物。

著录项

  • 公开/公告号US10444628B2

    专利类型

  • 公开/公告日2019-10-15

    原文格式PDF

  • 申请/专利权人 SHIN-ETSU CHEMICAL CO. LTD.;

    申请/专利号US201615371815

  • 申请日2016-12-07

  • 分类号G03F7/11;G03F7/039;G03F7/16;G03F7/20;G03F7/30;C07C49/653;C07C49/683;H01L21/311;H01L21/033;C07D311/92;C07C39/23;C07C43/215;C07C43/285;H01L21/30;H01L21/027;G03F7/09;C09D5;G03F1/32;G03F7/004;G03F7/32;H01L21/308;G03F7/075;

  • 国家 US

  • 入库时间 2022-08-21 12:16:44

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