RX)m1 (1A)wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2≤m1≤10,; wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2,; wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties."/>
Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process
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Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process
Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process
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机译:用于形成有机膜的化合物,用于形成有机膜的组合物,用于形成有机膜的方法以及构图工艺
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摘要
A compound for forming an organic film shown by the formula (1A),RX)m1 (1A)wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2≤m1≤10,; wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2,; wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.
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机译:用于形成式(1A)所示的有机膜的化合物,<?in-line-formulae description =“ In-line Formulae” end =“ lead”?> R X) m1 Sub>(1A)<?in-line-formulae description =“ In-line Formulae” end =“ tail “?>其中R代表单键或具有1至50个碳原子的有机基团; X表示式(1B)所示的基团。 m1表示满足2≤m1≤10的整数,; 化学>其中X 2 Sup>表示具有1至10个碳原子的二价有机基团; n1代表0或1; n2代表1或2; X 3 Sup>表示式(1C)所示的基团。 n5代表0、1或2; 化学>其中R 10 Sup>表示氢原子或具有1至10个碳原子的饱和或不饱和烃基,其中式(1C)中苯环的氢原子可被甲基或甲氧基取代组。该用于形成有机膜的化合物可以提供具有良好的耐干蚀刻性,至400℃以上的耐热性,高填充性和平坦化性的有机膜组合物。
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