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Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials
Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials
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机译:含的III-N蚀刻终止层,用于选择性蚀刻III族氮化物和相关材料
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摘要
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group III-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.
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