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PROCEDE DE FABRICATION D'UNE HETEROSTRUCTURE COMPORTANT DES STRUCTURES ELEMENTAIRES ACTIVES OU PASSIVES EN MATERIAU III-V A LA SURFACE D'UN SUBSTRAT A BASE DE SILICIUM
PROCEDE DE FABRICATION D'UNE HETEROSTRUCTURE COMPORTANT DES STRUCTURES ELEMENTAIRES ACTIVES OU PASSIVES EN MATERIAU III-V A LA SURFACE D'UN SUBSTRAT A BASE DE SILICIUM
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机译:在基于硅的基质表面上制造包含III-V材料中基本主动或被动结构的异质结构的过程
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摘要
A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.
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