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Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
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机译:在存在氧化硅的情况下在硅表面上选择性生长氧化硅或氮化硅
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摘要
Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.
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