SPIN ORBIT MATERIALS FOR EFFICIENT SPIN CURRENT GENERATION

摘要

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi₂Se₃, Bi_xSe_1-x, Bi_1-xSb_x, etc.) or a TI/non-magnetic metal (e.g., Bi₂Se₃/Ag, Bi_xSe_1-x/Ag, Bi_1-xSb_x/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.