III-NITRIDE NANOWIRE ARRAY MONOLITHIC PHOTONIC INTEGRATED CIRCUIT ON (001)SILICON OPERATING AT NEAR-INFRARED WAVELENGTHS

摘要

Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.