DEVICE AND METHOD FOR ROTATIONAL AND CONTINUOUS CRYSTAL GROWTH BY VGF PROCESS AFTER HORIZONTAL INJECTION AND SYNTHESIS

摘要

Disclosed are a device and a method for rotational and continuous crystal growth by a VGF process after a horizontal injection and synthesis process, pertaining to the technical field of the synthesis and growth of semiconductor crystals. The adopted technical solution includes a furnace body (17), a crystal synthesis and growth system disposed in a furnace cavity, a supporting heating system, a temperature measuring system, a heat preservation system, and a control system. The crystal synthesis and growth system includes a crucible (9) and a volatile element carrier (6) disposed on a horizontal side thereof. The horizontal injection and synthesis process is achieved by means of an injection pipe (8) of the volatile element carrier (6) communicating with the crucible (9). The furnace body (17) has a rotational degree of freedom by means of a matching rotating mechanism; as a result, after the direct horizontal injection and synthesis process of volatile elements and pure metal elements is complete, the furnace body (17) may slowly rotate under the control of the rotating mechanism, such that the synthesized crystal may continuously grow by a VGF process to prepare a high-purity semiconductor crystal compound. The melting of the seed crystal caused by pure metals before the VGF process for crystal growth is avoided. The steps are simple, easy to operate and control, and facilitate the industrial production of semiconductor crystals.