首页> 外国专利> ORGANIC FIELD EFFECT TRANSISTOR (OFET) FOR THE DETECTION OF GRAM NEGATIVE/POSITIVE BACTERIA, METHOD OF DETECTION AND FABRICATION OF THE TRANSISTOR

ORGANIC FIELD EFFECT TRANSISTOR (OFET) FOR THE DETECTION OF GRAM NEGATIVE/POSITIVE BACTERIA, METHOD OF DETECTION AND FABRICATION OF THE TRANSISTOR

机译:用于检测革兰氏阴性/阳性细菌的有机场效应晶体管(OFET),晶体管的检测和制造方法

摘要

The present invention discloses an ultra-low voltage operated OFET based bio-sensing system for the detection of biological species5 including Gram positive bacteria and/or Gram negative bacteria comprising an OFET device having a base substrate, a gate electrode deposited on said base substrate, layered hybrid dielectrics deposited on said gate electrode having top and bottom dielectric layer of low dielectric constant (k) based dielectric materials and intermediate dielectric layer of high dielectric constant (k)10 based dielectric material, n-type organic semiconducting layer based active channel deposited on top of said layered hybrid dielectrics, a source electrode and a drain electrode deposited on the top side said n-type organic semiconducting layer; and adsorbing layer grown on the n-type semiconducting layer between the source electrode and the drain electrode to15 adsorbed the Gram positive and/or Gram negative bacteria to be detected over the active channel ensuring the adsorbed bacteria in said adsorbing layer stays above, and in direct contact with n-type organic semiconducting active channel.
机译:本发明公开了一种用于检测包括革兰氏阳性细菌和/或革兰氏阴性细菌的生物物种的基于超低电压操作的基于OFET的生物传感系统,其包括具有基底的OFET装置,沉积在所述基底上的栅电极,沉积在具有低介电常数(k)基介电材料的顶部和底部介电层和高介电常数(k)10基介电材料的中间介电层的上述栅电极上沉积的分层混合电介质,沉积n型有机半导体层的有源沟道在所述层状混合电介质的顶部上,在所述n型有机半导体层的顶侧上沉积源极和漏极。在源电极和漏电极之间的n型半导体层上生长的吸附层在活性通道上吸附了革兰氏阳性细菌和/或革兰氏阴性细菌,以被检测到,以确保在所述吸附层中被吸附的细菌停留在上方,并且与n型有机半导体有源沟道直接接触。

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