A radiation sensitive detector array (112) of an imaging system (100) includes a first detector pixel (200). The first detector pixel includes a first bottom contact (118) and a first porous silicon structure (120). The first porous silicon structure includes a first plurality of columns of silicon (202). The first porous silicon structure further includes a first plurality of pores (204) with first quantum dots (122) interlaced with the first plurality of columns of silicon. The first porous silicon structure further includes first bulk silicon (208) below the first plurality of columns of silicon and the first plurality of pores. The first bulk silicon is adjacent to the bottom contact. The first porous silicon structure further includes a first electrically conductive via (124) integrated in the first bulk silicon adjacent to at least one of the first plurality of pores with the first quantum dots and in electrical communication with the first bottom contact.
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