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PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING AND METHOD FOR MANUFACTURING SAID PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING, AND SEMICONDUCTOR DEVICE USING PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING AND METHOD FOR MANUFACTURING SAID SEMICONDUCTOR DEVICE
PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING AND METHOD FOR MANUFACTURING SAID PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING, AND SEMICONDUCTOR DEVICE USING PRECIOUS METAL COATED SILVER WIRE FOR BALL BONDING AND METHOD FOR MANUFACTURING SAID SEMICONDUCTOR DEVICE
The purpose of the present invention, in a semiconductor device for which an electrode of a semiconductor chip and an electrode of a lead frame, etc., are connected by a bonding wire, is to provide a precious metal coated silver bonding wire for which corrosion of a bonding interface is suppressed, and for which electrification failure does not occur, even under severe high temperature, high humidity conditions of an automobile, etc. This precious metal coated silver wire for ball bonding of the present invention is characterized in that in a precious metal coated silver wire comprising a precious metal coating layer on a core material consisting of pure silver or a silver alloy, the wire includes at least one type of sulfur group element, the precious metal coating layer has at least one layer that is a palladium layer, the content of palladium with respect to the wire overall in total is 0.01 mass%-5.0 mass% [inclusive], and the content of the sulfur group element with respect to the wire overall in total is 0.1 mass ppm-100 mass ppm [inclusive].
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