SINGLE EVENT EFFECT AND TOTAL IONIZING EFFECT HARDENED N-MOSFET LAYOUT

摘要

The present invention relates to a radiation-resistant unit MOSFET for blocking a leakage current path caused by a total ionizing effect and reducing the effect of a current pulse caused by a single event. The radiation-resistant unit MOSFET includes a poly gate layer designating a gate region and at least one dummy gate region, a source and drain, a P+ layer designating a P+ region in the source and the drain, and includes a P-active layer and a dummy drain capable of applying a voltage. According to the present invention described above, it is possible to provide an electronic part which normally operates even in a radiation environment where particle radiation and electromagnetic radiation exist.