首页> 外国专利> MEASURING METHOD OF THE RASIDUAL STRESS OF A METAL SUBSTRARE FOR DEPOSITION MASK AND THE METAL SUBSTRATE HAVING IMPROVED RASIDUAL STRESS

MEASURING METHOD OF THE RASIDUAL STRESS OF A METAL SUBSTRARE FOR DEPOSITION MASK AND THE METAL SUBSTRATE HAVING IMPROVED RASIDUAL STRESS

机译:金属基质沉积膜残余应力的测量方法及具有改善的残余应力的金属基质

摘要

An embodiment of the present invention relates to a method for measuring a residual stress of a metal plate used in manufacturing a mask for deposition to deposit an OLED pixel, wherein the metal plate has a first direction and a second direction crossing the first direction. The residual stress measuring method comprises the following steps: extracting a sample metal plate from the metal plate; and measuring the residual stress of the sample metal plate, wherein a first residual stress rate and a second residual stress rate of the metal plate are 0.06 or less, the first residual stress rate is less than the second residual stress rate, the first residual stress rate is the residual stress rate of an arbitrary first sample metal plate in the first direction and the second residual stress rate is the residual stress rate of an arbitrary second sample metal plate in the second direction.
机译:本发明的实施例涉及一种用于测量在制造用于沉积以沉积OLED像素的掩模中使用的金属板的残余应力的方法,其中金属板具有第一方向和与第一方向交叉的第二方向。残余应力测量方法包括以下步骤:从金属板上提取样品金属板;以及并测量样品金属板的残余应力,其中金属板的第一残余应力率和第二残余应力率为0.06以下,第一残余应力率小于第二残余应力率,第一残余应力“速率”是任意的第一样品金属板在第一方向上的残余应力率,“第二残留应力”是任意第二样品金属板在第二方向上的残余应力率。

著录项

  • 公开/公告号KR20190058055A

    专利类型

  • 公开/公告日2019-05-29

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20170155670

  • 发明设计人 JO YEONG DEUK;LEE SANG YU;

    申请日2017-11-21

  • 分类号H01L51/56;H01L21/66;H01L51;

  • 国家 KR

  • 入库时间 2022-08-21 11:50:51

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