Ti3AlC2 Ti3AlC2 Preparation method of Ti3AlC2 tape and the joining method of silicon carbide using the same

摘要

The present invention relates to a method of producing a Ti_3AlC_2 tape for a bonding material and a method of bonding silicon carbide using the Ti_3AlC_2 tape for the bonding material. When the Ti_3AlC_2 tape for a bonding material produced by the method according to the present invention is used, the method can realize bonding enabling the Ti_3AlC_2 tape for a bonding material to be used as a high temperature structural material or a nuclear reactor structural material by realizing bonding of silicon carbide monolith or silicon carbide fiber-reinforced silicon carbide composite (SiC_f/SiC) which can be used from room temperature to a high temperature of 1,500°C in an atmosphere where oxygen does not exist. Further, bonding uniformity can be improved by using the Ti_3AlC_2 tape for a bonding material produced by the method according to the present invention in bonding of a complicated shape. Further, characteristics′ deterioration due to the presence of a bonding material, an alien substance, is prevented and characteristics of a silicon carbide (SiC) base material can be obtained by providing a bonding method for maintaining the Ti_3AlC_2 tape for a bonding material at high temperatures for a long time, thereby diffusing the Ti_3AlC_2 tape for a bonding material into a bonding base material of silicon carbide (SiC) such that the bonding material is not present.