2 Structure and Fabrication Method of Photo Detector Device using Two Dimensional Doping Technology

摘要

The present invention relates to a light receiving element using two-dimensional doping technology and a manufacturing method thereof. The light receiving element comprises: a light absorption epitaxial layer positioned at front surface on top of the semiconductor substrate; and a focusing layer, an acceleration layer, a multiplication layer, a cap layer, and an n(^+)- epitaxial layer sequentially stacked on part of the center on top of the light absorption epitaxial layer and forming a mesa structure. The p-type impurity ions are two-dimensionally doped on the focusing layer and the multiplication layer.