Fabrication method of solution-processed high quality Al2O3/BN dielectric films for high performance IGZO TFTs and IGZO TFTs thereof

摘要

A method for manufacturing a high quality Al ₂ O ₃ / BN insulating film based on a low temperature solution process for high performance IGZO TFTs is disclosed. The method is different from the TFT device implementation method that requires expensive vacuum equipment such as CVD and ALD and requires a high temperature of 1000 ^° C. or higher, so that the solution is a low temperature in an ambient atmosphere. It is possible to manufacture thin film devices by the process, and it is possible to manufacture thin film based on hybrid composite structure with low dielectric material boron nitride (BN) which has high mechanical stability and oxidation resistance to Al ₂ O _{3, which} is a high dielectric material. The high oxygen defect density inside ₂ O ₃ provides improved performance while overcoming limitations in terms of high quality electronic device implementation and reliability. I) It is also very suitable for the synthesis of BN, a low dielectric material for Al ₂ O ₃ , a high dielectric material. uniform and maintain a clean surface of the thin film state, ii), and the significantly reduced oxygen defect density, hybrid Al ₂ O ₃ / BN thin film (insulating film) within a reduced oxygen vacancy wheat By iii) a hybrid Al ₂ O ₃ / BN and improving the leakage current and the dielectric constant of the thin film, isolated by using an optimized low-temperature solution process, how the thin film enhanced by the in reduced oxygen defect density Induim gallium zinc oxide (IGZO) thin The characteristics of the film transistor (TFT) are improved.