APPARATUS AND METHOD FOR MEASURING PERFORMANCE DEGRADATION RESULTED BY TOTAL IONIZING DOSE EFFECT ON INTEGRATED CIRCUIT USING FULLY-DEPLETED SILICON-ON-INSULATORPROCESS

摘要

The present invention relates to an apparatus and a method for measuring performance deterioration of an integrated circuit using a complete deletion mode silicon-on-insulator process caused by a total ionization dose effect. The apparatus for measuring circuit performance deterioration caused by a total ionization dose effect includes: a first inverter; an N^th inverter directly connected to the first inverter or indirectly connected to the first inverter through at least one different inverter; and a switch selectively connecting the first inverter to any one of external and the N^th inverter. The first inverter may include: a controlled stress transistor; an uncontrolled stress transistor connected to the controlled stress transistor in series; a transfer gate transistor selectively connecting the uncontrolled stress transistor to an IN node; a stress mode biasing transistor performing biasing of the stress transistor and the uncontrolled stress transistor; and a power switch transistor turning on/off the biasing. The present invention can extend the life of an integrated circuit, thereby reducing maintenance costs for a circuit or a device.