METHOD FOR CONTROLLING A QUANTUM DEVICE WITH A QUANTITY OF SPIN

摘要

A method of controlling a spin qubit quantum device (100) comprising: - a semiconductor portion (102); a dielectric layer (104) covered by the semiconductive portion; - a front gate (108) partially covering an upper edge (113) of the semiconductor portion; - a rear gate; in which, during a manipulation of a spin state: the exposure of the device to a magnetic field B of value such that g.μB.B min (? (Vbg)), and - the application, on the rear gate, of an electric potential Vbg of value such that A (Vbg) g.μB.B + 2 | Mso |, and the application, on the front gate, of a potential of confinement and of an RF electric signal triggering a spin state change, with g corresponding to the Landé factor, μB corresponding to the Bohr magneton, A corresponding to the inter-valley energy gap in the semiconductor portion, and Mso corresponding to the coupling inter-valley spin-orbit.