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Interposer device including at least one transistor and at least one through-substrate via
Interposer device including at least one transistor and at least one through-substrate via
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机译:插入装置,包括至少一个晶体管和至少一个贯穿衬底的通孔
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摘要
In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.
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