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Method for producing a wafer from a hexagonal single crystal ingot by applying a laser beam to form a first production history, an exfoliation layer, and a second production history
Method for producing a wafer from a hexagonal single crystal ingot by applying a laser beam to form a first production history, an exfoliation layer, and a second production history
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机译:通过施加激光束以形成第一生产历史,剥离层和第二生产历史从六方晶单晶锭生产晶片的方法
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摘要
A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.
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