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Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process

机译:具有缩短的恢复时间的电子结装置,适用于受当前再循环现象和相关制造工艺影响的应用

摘要

A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.
机译:形成具有半导体主体的集成电子器件的方法包括:形成具有第一导电类型的第一电极区域;以及形成具有第一导电类型的第一电极区域。形成具有第二导电类型的第二电极区域,该第二电极区域与第一电极区域形成结;形成纳米结构的半导体区域,其在第一和第二电极区域之一中延伸。

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