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Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
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机译:包含氢扩散阻挡结构的三维存储器件及其制造方法
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摘要
A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.
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