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Light-emitting device with high carrier mobility QD layer

机译:具有高载流子迁移率QD层的发光装置

摘要

A light-emitting device includes an emissive layer in which first and second charge carriers recombine to emit light; a first electrode from which the first charge carriers are generated and a second electrode from which the second charge carriers are generated; a first charge transport layer that injects the first charge carriers from the first electrode into the emissive layer; and a second charge transport layer that injects the second charge carriers from the second electrode into the emissive layer. The emissive layer includes quantum dots having a core in which the first and second charge carriers recombine and a shell, and at least a portion of the quantum dots have a Quasi-Type II configuration in which the first charge carriers are confined to the core and the second charge carriers are non-confined charge carriers that are not confined to the core or the shell. The confined charge carriers may be the electrons and the non-confined charge carriers may be the holes, or vice versa.
机译:发光器件包括:发光层,其中第一和第二电荷载流子复合以发光;发光层包括发光层。产生第一电荷载流子的第一电极和产生第二电荷载流子的第二电极;第一电荷传输层,其将来自第一电极的第一电荷载流子注入到发射层中;第二电荷传输层,其将来自第二电极的第二电荷载流子注入到发射层中。发射层包括具有使第一电荷载流子和第二电荷载流子在其中复合的核和壳的量子点,并且至少一部分量子点具有准类型II构造,其中第一电荷载流子限于核和第二电荷载流子是不限于核或壳的无限制电荷载流子。约束电荷载流子可以是电子,而非约束电荷载流子可以是空穴,反之亦然。

著录项

  • 公开/公告号US10615358B1

    专利类型

  • 公开/公告日2020-04-07

    原文格式PDF

  • 申请/专利权人 SHARP KABUSHIKI KAISHA;

    申请/专利号US201816162906

  • 发明设计人 JAMES ANDREW ROBERTS PALLES-DIMMOCK;

    申请日2018-10-17

  • 分类号H01L51/42;H01L51/50;C08G73/02;C08G61/12;H01L51/52;H01L51;

  • 国家 US

  • 入库时间 2022-08-21 11:26:22

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