A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.
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机译:在绝缘体上硅晶片上构造的横向Ge / Si APD包括硅器件层,该硅器件层具有被掺杂以提供横向电场的区域和雪崩区域。掺杂水平适中的区域与锗体接触。锗主体没有金属触点。与锗体的电接触是通过硅器件层中的掺杂区域实现的。
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