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PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERISTICS AND PHASE-CHANGE MEMORY HAVING HIGHLY INTEGRATED THREE-DIMENSIONAL ARCHITECTURE USING SAME
PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERISTICS AND PHASE-CHANGE MEMORY HAVING HIGHLY INTEGRATED THREE-DIMENSIONAL ARCHITECTURE USING SAME
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机译:相变存储器具有相反的相变特性,相变存储器具有高度集成的三维结构,使用相同的结构
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摘要
According to an embodiment, a phase-change memory device comprises: an upper electrode and a lower electrode; a phase-change layer in which a crystal state thereof is changed by heat supplied by the upper electrode and the lower electrode; and a selector which selectively switches the heat supplied by the upper electrode and the lower electrode to the phase-change layer, wherein the selector is formed of a compound which includes a transition metal in the phase-change material so as to have a high resistance when the crystalline state of the selector is crystalline and so as to have a low resistance when the crystalline state of the selector is non-crystalline.
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