MULTI-SCHOTTKY-LAYER TRENCH JUNCTION BARRIER SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF

摘要

A Schottky diode may include a substrate; an epitaxial layer deposited on top of the substrate; one or more trenches formed on top of the epitaxial layer; an implantation region at a bottom portion of each trench; an ohmic contact metal on the other side of the substrate; a first Schottky contact metal deposited onto the implantation region in each trench to form a first Schottky junction between the first Schottky contact metal and the epitaxial layer at a lower trench sidewall; a second Schottky contact metal filling each trench and extending a predetermined length to each corner of mesas on the epitaxial layer to form a second Schottky junction between the second Schottky contact metal and the epitaxial layer at an upper trench sidewall; and a third Schottky contact metal covering the second Schottky contact metal and the epitaxial layer to form a third Schottky junction.