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INFRARED DETECTOR, INFRARED DETECTION DEVICE, AND METHOD OF MANUFACTURING INFRARED DETECTOR
INFRARED DETECTOR, INFRARED DETECTION DEVICE, AND METHOD OF MANUFACTURING INFRARED DETECTOR
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机译:红外探测器,红外检测装置以及制造红外探测器的方法
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摘要
An infrared detector includes a pixel separation wall. The infrared detector includes a semiconductor crystal substrate; a first contact layer formed on the semiconductor crystal substrate, a pixel separation wall formed on the first contact layer and configured to separate pixels; a buffer layer formed on the first contact layer and on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall, an infrared-absorbing layer formed on the buffer layer, a second contact layer formed on the infrared-absorbing layer, an upper electrode formed on the second contact layer, and a lower electrode formed on the first contact layer. The buffer layer and the first contact layer are formed of a compound semiconductor of a first conductivity type. The pixel separation wall and the second contact layer are formed of a compound semiconductor of a second conductivity type.
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