The present invention relates to a semiconductor device type Solar Cell based on a semiconductor structure of GaN-n/InGaN/GaN-p/MgO where the crystalline phase of the material used is in the cubic phase. Herein, the illumination can be carried out on both sides, due to the transparency of MgO metallic oxide. The solar cell-type semiconductor device can generate an electric current when it is illuminated with sunlight or artificial light.
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